The IPD50R650CEATMA1 is a single N-CHANNEL MOSFET from Infineon with a maximum operating temperature range of -55°C to 150°C. It features a maximum drain to source voltage of 500V, a continuous drain current of 6.1A, and a drain to source resistance of 650mR. The device is packaged in a TO-252-3 package and is available in tape and reel packaging. It is not RoHS compliant, but is Reach SVHC compliant.
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Infineon IPD50R650CEATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Resistance | 650mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 342pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Rds On Max | 650mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Series | CoolMOS™ CE |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 6ns |
| Weight | 0.139332oz |
| RoHS | Not Compliant |
Download the complete datasheet for Infineon IPD50R650CEATMA1 to view detailed technical specifications.
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