Infineon
IPD90N04S3H4ATMA1
Power Field-Effect Transistor, 90A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
PackageTO-252-3
Power115W
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Technical Specifications
Infineon IPD90N04S3H4ATMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
90A
Drain to Source Voltage (Vdss)
40V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
3.9nF
Lead Free
Contains Lead
Max Dual Supply Voltage
40V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
115W
Package Quantity
2500
Packaging
Tape and Reel
Power Dissipation
115W
Rds On Max
4.3mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
30ns
Turn-On Delay Time
20ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N04S3H4ATMA1 Datasheet
Download the complete datasheet for Infineon IPD90N04S3H4ATMA1 to view detailed technical specifications.
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