Infineon
IPD90N04S3H4ATMA1
Power Field-Effect Transistor, 90A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
Power Field-Effect Transistor, 90A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
PackageTO-252-3
Power115W
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Technical Specifications
Infineon IPD90N04S3H4ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.9nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 115W |
| Rds On Max | 4.3mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 20ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD90N04S3H4ATMA1 Datasheet
Download the complete datasheet for Infineon IPD90N04S3H4ATMA1 to view detailed technical specifications.
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