Infineon
IPD90R1K2C3BTMA1
Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN
Power Field-Effect Transistor, 5.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, TO-252, 3 PIN
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Technical Specifications
Infineon IPD90R1K2C3BTMA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Pin Count | 4 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD90R1K2C3BTMA1 Datasheet
Download the complete datasheet for Infineon IPD90R1K2C3BTMA1 to view detailed technical specifications.
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