This N-channel power MOSFET is rated for 600 V drain-source breakdown and 15 mΩ maximum on-state resistance at 25°C. It uses Infineon's CoolMOS CFD7 superjunction technology with an ultra-fast body diode, low gate charge, and low stored output energy for soft-switching resonant converters. The device is housed in a PG-HDSOP-22 package with separate driver source and power source connections, and it is optimized for phase-shift full-bridge and LLC topologies in server, telecom, and EV charging power stages. It operates to 150°C junction temperature and supports up to 149 A continuous drain current at 25°C case temperature.
Infineon IPDQ60R015CFD7 technical specifications.
| Drain-Source Breakdown Voltage | 600V |
| Drain-Source Voltage at Tj,max | 650V |
| Continuous Drain Current at Tc=25°C | 149A |
| Continuous Drain Current at Tc=100°C | 95A |
| Pulsed Drain Current | 495A |
| Drain-Source On-State Resistance Max | 15mΩ |
| Drain-Source On-State Resistance Typ at 25°C | 12mΩ |
| Drain-Source On-State Resistance Typ at 150°C | 27mΩ |
| Total Gate Charge | 251nC |
| Gate-Source Charge | 53nC |
| Gate-Drain Charge | 92nC |
| Input Capacitance | 9900pF |
| Output Capacitance | 196pF |
| Output Energy-Related Capacitance | 361pF |
| Thermal Resistance Junction-Case | 0.19°C/W |
| Operating Junction Temperature Max | 150°C |
| Reverse Recovery Time Max | 308ns |
| Reverse Recovery Charge Max | 3.20µC |
| Diode Forward Voltage Typ | 0.9V |
| Package | PG-HDSOP-22 |
No datasheet is available for this part.
