This N-channel superjunction power MOSFET is rated for 650 V drain-source voltage and 29 A continuous drain current at 25°C case temperature. It uses Infineon's CoolMOS™ CFD7 technology with an ultra-fast body diode, 99 mΩ maximum RDS(on), and 39 nC typical total gate charge for high-efficiency resonant and hard-switching power stages. The device is housed in a PG-HDSOP-22 package and is qualified according to JEDEC for industrial applications. Its operating junction temperature range is -55°C to 150°C, and the datasheet specifies 186 W maximum power dissipation at 25°C case temperature.
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| Transistor Type | N-Channel Superjunction MOSFET |
| Drain-Source Voltage | 650V |
| Drain-Source Voltage at Tj,max | 700V |
| Continuous Drain Current | 29A |
| Pulsed Drain Current | 82A |
| On-Resistance RDS(on) Max | 99mΩ |
| On-Resistance RDS(on) Typ | 87mΩ |
| Total Gate Charge Typ | 39nC |
| Gate-Source Threshold Voltage | 3.5 to 4.5V |
| Power Dissipation | 186W |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.67°C/W |
| Input Capacitance | 1942pF |
| Output Capacitance | 32pF |
| Turn-On Delay Time | 22ns |
| Turn-Off Delay Time | 85ns |
| Gate-to-Source Charge | 11nC |
| Gate-to-Drain Charge | 12nC |
| Reverse Recovery Time | 113 typ, 170 maxns |
| Reverse Recovery Charge | 0.6 typ, 1.2 maxµC |
| Body Diode Forward Voltage | 1.0V |
| Avalanche Energy Single Pulse | 97mJ |
| Package | PG-HDSOP-22 |
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