IPDQ65R099CFD7A

This automotive-qualified N-channel superjunction MOSFET is rated for 650 V and supports up to 29 A continuous drain current in a Q-DPAK top-side-cooled surface-mount package. It uses CoolMOS™ CFD7A technology and provides 89 mΩ typical and 99 mΩ maximum RDS(on) at 25 °C, with 39 nC typical gate charge at 10 V. The device supports up to 82 A pulsed drain current, 186 W maximum power dissipation, and operation from -55 °C to 150 °C. The package includes Kelvin source capability with 3.2 mm creepage distance, and the orderable part is lead-free, halogen-free, and RoHS compliant.