The IPI037N08N3GHKSA1 is an N-channel MOSFET from Infineon with a maximum operating temperature of -55°C to 175°C. It features a drain to source breakdown voltage of 80V and a continuous drain current of 100A. The device is packaged in a TO-262-3 package and has a maximum power dissipation of 214W.
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Infineon IPI037N08N3GHKSA1 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 100A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 3.75mR |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 8.11nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| Rds On Max | 3.75mR |
| RoHS Compliant | No |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 23ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Infineon IPI037N08N3GHKSA1 to view detailed technical specifications.
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