The IPI47N10S-33 is a N-CHANNEL SIPMOS MOSFET from Infineon with a maximum drain to source breakdown voltage of 100V and a continuous drain current of 47A. It features a fall time of 15ns and a gate to source voltage of 20V. The device is packaged in a TO-262-3 and is halogen free. It operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 175W.
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Infineon IPI47N10S-33 technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 47A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 2.5nF |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 175W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 175W |
| Rds On Max | 33mR |
| RoHS Compliant | Yes |
| Series | SIPMOS® |
| Turn-Off Delay Time | 63ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPI47N10S-33 to view detailed technical specifications.
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