This N-channel power MOSFET belongs to the CoolMOS P6 series and is rated for 600 V drain-source operation. It features a maximum drain-source on-resistance of 210 mΩ at 25 °C with a typical total gate charge of 37 nC. The device is supplied in the PG-VSON-4 ThinPAK 8x8 package and supports continuous drain current up to 19.2 A at 25 °C case temperature. It operates across a junction temperature range of -40 °C to 150 °C and includes a reverse diode with 310 ns typical reverse recovery time. Typical dynamic capacitances are 1750 pF input, 76 pF output, and the datasheet lists 4.9 µJ typical Eoss at 400 V.
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Infineon IPL60R210P6 technical specifications.
| Transistor Type | N-channel power MOSFET |
| Drain-Source Voltage | 600V |
| Drain-Source On-Resistance | 210 maxmΩ |
| Continuous Drain Current | 19.2 at Tc=25°CA |
| Continuous Drain Current | 12.1 at Tc=100°CA |
| Pulsed Drain Current | 52A |
| Total Gate Charge | 37 typnC |
| Gate-Source Charge | 11 typnC |
| Gate-Drain Charge | 13 typnC |
| Input Capacitance | 1750 typpF |
| Output Capacitance | 76 typpF |
| Turn-On Delay Time | 15 typns |
| Rise Time | 8 typns |
| Turn-Off Delay Time | 45 typns |
| Fall Time | 7 typns |
| Reverse Recovery Time | 310 typns |
| Reverse Recovery Charge | 4 typµC |
| Peak Reverse Recovery Current | 25 typA |
| Operating Junction Temperature | -40 to 150°C |
| Package | PG-VSON-4 |
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