This device is a CoolMOS P7 N-channel power MOSFET rated for 700 V drain-source voltage and 10 A maximum drain current in a PG-SOT223 package. It is specified with a maximum RDS(on) of 450 mΩ at 10 V gate drive and 25 °C, with typical total gate charge of 13.1 nC. The transistor supports surface-mount assembly, dissipates up to 7.1 W at 25 °C case temperature, and operates from -40 °C to 150 °C. Infineon positions it for cost-sensitive flyback power applications such as chargers, adapters, lighting, and TV power stages.
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| Drain-Source Voltage | 700V |
| Continuous Drain Current | 10A |
| Continuous Drain Current @ 100°C | 6.5A |
| Pulsed Drain Current | 25.9A |
| On-Resistance RDS(on) Max | 450mΩ |
| Gate Charge Qg Typ | 13.1nC |
| Gate-Drain Charge Qgd | 5nC |
| Input Capacitance Ciss | 424pF |
| Output Capacitance Coss | 8pF |
| Power Dissipation | 7.1W |
| Gate Threshold Voltage | 2.5 to 3.5V |
| Operating Temperature Range | -40 to 150°C |
| Package | SOT-223-3 |
| Mounting | SMT |
| Pin Count | 3Pins |
| Thermal Resistance Junction-Ambient Max | 160K/W |
| RoHS | Compliant |
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