This device is an N-channel power MOSFET in the StrongIRFET 2 family with an 80 V drain-source rating and PG-TO220-3 package. It offers a maximum drain-source on-resistance of 2.4 mΩ at 10 V gate drive and 3.3 mΩ at 6 V gate drive. The transistor supports up to 182 A continuous drain current, 728 A pulsed drain current, and 303 mJ single-pulse avalanche energy. Its operating junction temperature extends to 175 °C, and the integrated body diode is rated for 142 A continuous forward current with 39 ns reverse recovery time. The part is Pb-free, RoHS compliant, and halogen-free according to IEC 61249-2-21.
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Infineon IPP024N08NF2S technical specifications.
| Drain-Source Voltage | 80V |
| Continuous Drain Current | 182A |
| Pulsed Drain Current | 728A |
| Single-Pulse Avalanche Energy | 303mJ |
| Operating Junction Temperature | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.7°C/W |
| Thermal Resistance Junction-to-Ambient | 40°C/W |
| Gate Threshold Voltage | 2.2 to 3.8V |
| Drain-Source On-Resistance @ VGS=10 V | 2.4 maxmΩ |
| Drain-Source On-Resistance @ VGS=6 V | 3.3 maxmΩ |
| Gate Resistance | 1.8 typΩ |
| Input Capacitance | 6200 typpF |
| Output Capacitance | 1000 typpF |
| Reverse Transfer Capacitance | 45 typpF |
| Turn-On Delay Time | 19 typns |
| Gate-to-Source Charge | 29 typnC |
| Gate-to-Drain Charge | 19 typnC |
| Total Gate Charge | 89 typ, 133 maxnC |
| Gate Plateau Voltage | 4.7 typV |
| Output Charge | 105 typnC |
| Diode Continuous Forward Current | 142A |
| Diode Forward Voltage | 0.91 typ, 1.2 maxV |
| Reverse Recovery Time | 39 typns |
| Reverse Recovery Charge | 242 typnC |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen-free | Yes |
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