This N-channel power MOSFET uses OptiMOS™ 3 technology and is rated for 60 V drain-source voltage with 120 A continuous drain current at 25°C. It offers a maximum RDS(on) of 3.2 mΩ at 10 V, 124 nC typical gate charge, and 188 W maximum power dissipation in a TO-220 package. The device operates from -55°C to 175°C and is suited to fast-switching power stages including synchronous rectification, motor control, solar microinverters, and DC-DC converters. It is lead-free, halogen-free, and RoHS compliant.
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Infineon IPP032N06N3 G technical specifications.
| Drain-source voltage | 60V |
| Continuous drain current (@25°C) | 120A |
| Pulsed drain current | 480A |
| On-resistance RDS(on) max (@10V) | 3.2mΩ |
| Gate charge QG typ (@10V) | 124nC |
| Input capacitance Ciss | 10000pF |
| Output capacitance Coss | 2200pF |
| Power dissipation Ptot max | 188W |
| Thermal resistance Rth | 0.8K/W |
| Operating temperature range | -55 to 175°C |
| Gate threshold voltage range | 2 to 4V |
| Gate threshold voltage typical | 3V |
| Polarity | N |
| Package | TO-220 |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
No datasheet is available for this part.
