The IPP037N06L3GHKSA1 is a TO-220-3 packaged N-channel MOSFET from Infineon, rated for 60V drain to source voltage and 90A continuous drain current. It features a drain to source resistance of 3.4 milliohms and a fall time of 13 nanoseconds. The device is RoHS compliant and available in a packaging quantity of 500 units per rail or tube. It is suitable for use in high-current applications where a low on-resistance is required.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Infineon IPP037N06L3GHKSA1 technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 3.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 13ns |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPP037N06L3GHKSA1 Datasheet
Download the complete datasheet for Infineon IPP037N06L3GHKSA1 to view detailed technical specifications.
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