This N-channel power MOSFET uses OptiMOS™ 3 technology and is housed in a TO-220 package. It is rated for 80 V drain-source voltage, 100 A continuous drain current at 25 °C, 400 A pulsed drain current, and 214 W total power dissipation. The device specifies 3.75 mΩ maximum RDS(on) at 10 V, 88 nC typical gate charge at 10 V, 6100 pF input capacitance, and 1640 pF output capacitance. It operates from -55 °C to 175 °C, has 0.7 K/W thermal resistance, and lists a 2 V to 3.5 V gate-threshold range with a 2.8 V typical threshold. The orderable version is active, lead-free, halogen-free, and RoHS compliant.
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Infineon IPP037N08N3-G technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) Max | 80V |
| Continuous Drain Current (ID) Max @25°C | 100A |
| Pulsed Drain Current (IDpuls) Max | 400A |
| On-Resistance RDS(on) Max @10V | 3.75mΩ |
| Gate Charge (Qg) Typ @10V | 88nC |
| Input Capacitance (Ciss) | 6100pF |
| Output Capacitance (Coss) | 1640pF |
| Power Dissipation (Ptot) Max | 214W |
| Thermal Resistance (Rth) | 0.7K/W |
| Operating Temperature Range | -55 to 175°C |
| Gate Threshold Voltage Range VGS(th) | 2 to 3.5V |
| Gate Threshold Voltage VGS(th) Typical | 2.8V |
| Package | TO-220 |
| Polarity | N |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
No datasheet is available for this part.
