The IPP040N06N3GHKSA1 is a high-power N-channel MOSFET from Infineon, featuring a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 188W and a continuous drain current of 90A. The device is packaged in a TO-220-3 case and is suitable for through-hole mounting. It has a drain to source voltage of 60V and a drain to source resistance of 3.7mR.
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Infineon IPP040N06N3GHKSA1 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Resistance | 3.7mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 11nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 188W |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 30ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Infineon IPP040N06N3GHKSA1 to view detailed technical specifications.
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