This N-channel power MOSFET uses Infineon's OptiMOS™ 5 technology and is rated for 150 V drain-source voltage and 120 A continuous drain current at 25°C. It is offered in a TO-220 through-hole package with a maximum RDS(on) of 5.1 mΩ at 10 V gate drive and supports operation from -55°C to 175°C. Typical dynamic characteristics include 80 nC total gate charge, 16 nC gate-drain charge, 6000 pF input capacitance, and 83 nC reverse recovery charge. The device is intended for high-frequency switching and synchronous rectification, with low reverse recovery behavior and commutation ruggedness for low-voltage drives, telecom, and solar power applications.
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| Transistor polarity | N-Channel |
| Technology | OptiMOS™ 5 |
| Drain-source voltage | 150V |
| Continuous drain current | 120A |
| Pulsed drain current | 480A |
| On-resistance RDS(on) max at VGS=10V | 5.1mΩ |
| Gate threshold voltage | 3.0 to 4.6V |
| Total gate charge | 80nC |
| Gate-drain charge | 16nC |
| Input capacitance | 6000pF |
| Output capacitance | 1500pF |
| Reverse transfer capacitance | 34pF |
| Power dissipation | 300W |
| Junction-to-case thermal resistance max | 0.5K/W |
| Junction-to-ambient thermal resistance max | 62K/W |
| Operating temperature range | -55 to 175°C |
| Reverse recovery charge | 83nC |
| Reverse recovery time | 60ns |
| Package | TO-220 |
| Mounting | THT |
| RoHS | Compliant |
| Halogen Free | Yes |
