This device is an N-channel StrongIRFET 2 power MOSFET rated for 100 V in a PG-TO220-3 package. It supports up to 52 A continuous drain current at TC = 25 °C and has 12.9 mΩ maximum drain-source on-resistance at VGS = 10 V, with 16.2 mΩ maximum at 6 V. Typical total gate charge is 19 nC, output charge is 26 nC, and input capacitance is 1300 pF. It is avalanche tested, qualified according to JEDEC standard, operates from -55 °C to 175 °C, and uses Pb-free, RoHS-compliant, halogen-free construction.
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| Channel Type | N-Channel |
| Drain-Source Voltage | 100V |
| Continuous Drain Current | 52A |
| Pulsed Drain Current | 208A |
| Drain-Source On-Resistance | 12.9 max @ VGS=10 V, ID=30 AmΩ |
| Drain-Source On-Resistance | 16.2 max @ VGS=6 V, ID=15 AmΩ |
| Gate Threshold Voltage | 2.2 to 3.8V |
| Power Dissipation | 71W |
| Operating Junction Temperature | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 2.1°C/W |
| Input Capacitance | 1300pF |
| Output Capacitance | 210pF |
| Reverse Transfer Capacitance | 10pF |
| Turn-On Delay Time | 8.8ns |
| Rise Time | 15ns |
| Turn-Off Delay Time | 13ns |
| Fall Time | 3.6ns |
| Total Gate Charge | 19 typ, 28 maxnC |
| Output Charge | 26nC |
| Reverse Recovery Time | 26ns |
| Reverse Recovery Charge | 135nC |
| RoHS | Compliant |
| Lead Finish | Pb-free lead plating |
| Halogen Free | According to IEC61249-2-21 |
