This P-channel power MOSFET is rated for -100 V drain-source voltage and -62 A continuous drain current at 25 °C. It is housed in a through-hole TO-220 package with 3 pins, supports up to -248 A pulsed drain current, and is rated for 300 W total power dissipation. The device specifies 33 mΩ maximum RDS(on) at 10 V, typical total gate charge of -189 nC at 10 V, and a gate-threshold range of -2.1 V to -4 V. Its operating temperature range is -55 °C to 175 °C, and the listed orderable part is RoHS compliant and halogen free.
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| Drain-Source Voltage (VDS) Max | -100V |
| Continuous Drain Current (ID) Max @25°C | -62A |
| Continuous Drain Current (ID) Max | -62A |
| Pulsed Drain Current (IDpuls) Max | -248A |
| Mounting | THT |
| Operating Temperature Range | -55 to 175°C |
| Package | TO-220 |
| Pin Count | 3Pins |
| Polarity | P |
| Total Power Dissipation (Ptot) Max | 300W |
| Total Gate Charge (Qg) Typ @10V | -189nC |
| Drain-Source On Resistance RDS(on) Max @10V | 33mΩ |
| Gate Threshold Voltage VGS(th) Range | -2.1 to -4V |
| Infineon Package | PG-TO220-3 |
| Package Name | TO220 |
| Packing Type | TUBE |
| Packing Size | 500 |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
