N-Channel Power MOSFET featuring 600V drain-source voltage and 20.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.19 ohms. Designed with a single element and three terminals, it is housed in a TO-220AB package. Maximum operating temperature reaches 150°C.
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Technical Specifications
Infineon IPP60R190C6XKSA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPP60R190C6XKSA1 Datasheet
Download the complete datasheet for Infineon IPP60R190C6XKSA1 to view detailed technical specifications.
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