This automotive-qualified N-channel power MOSFET is rated for 650 V drain-source voltage and 24 A continuous drain current. It uses Infineon's CoolMOS™ CFD7A technology in a TO220 through-hole package and is specified for operation from -40 °C to 150 °C. The device provides a maximum RDS(on) of 99 mΩ at 25 °C, a typical gate charge of 53 nC at 10 V, and a maximum pulsed drain current of 107 A. It is designed for higher switching frequency operation, high efficiency in soft-switching conditions, and use in hard and resonant topologies.
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| Drain-source voltage | 650V |
| Continuous drain current at 25°C | 24A |
| Continuous drain current max | 24A |
| Pulsed drain current max | 107A |
| Mounting | THT |
| Operating temperature range | -40 to 150°C |
| Package | TO220 |
| Polarity | N |
| Power dissipation max | 127W |
| Gate charge typ at 10 V | 53nC |
| Gate charge | 53nC |
| Qualification | Automotive |
| RDS(on) max at Tj=25°C | 99mΩ |
| RDS(on) at Tj=25°C | 82mΩ |
| Technology | CoolMOS™ CFD7A |
| Gate threshold voltage range | 3.5 to 4.5V |
| Gate threshold voltage | 4V |
| Special features | Highest cosmic radiation robustness |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
| Lead-free | No |
