The IPP80N04S3-06 is a high-power N-channel power MOSFET from Infineon, featuring a maximum continuous drain current of 80A and a maximum drain to source breakdown voltage of 40V. It is packaged in a TO-220-3 case and is halogen free. The device has a maximum operating temperature range of -55°C to 175°C and is RoHS compliant. It is suitable for high-power applications requiring a high level of current and voltage handling.
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Infineon IPP80N04S3-06 technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 9.25mm |
| Input Capacitance | 3.25nF |
| Length | 10mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Width | 4.4mm |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPP80N04S3-06 to view detailed technical specifications.
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