This device is a 650 V N-channel superjunction power MOSFET in Infineon's CoolMOS CFD7 family with an integrated fast body diode. It is offered in a bottom-side cooled Q-DPAK package and is specified for 64 A continuous drain current, 211 A pulsed drain current, and 357 W power dissipation. The MOSFET has a maximum RDS(on) of 40 mΩ, typical total gate charge of 97 nC at 10 V, and a gate threshold voltage centered at 4 V. Its operating temperature range is -55 °C to 150 °C, and the ordering information lists lead-free, RoHS-compliant, and halogen-free status.
Infineon IPQC65R040CFD7 technical specifications.
| Drain-Source Voltage | 650V |
| Continuous Drain Current | 64A |
| Pulsed Drain Current | 211A |
| On-Resistance RDS(on) | 40mOhm |
| Total Gate Charge | 97nC |
| Gate Threshold Voltage | 3.5 to 4.5V |
| Power Dissipation | 357W |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 150°C |
| Mounting | SMT |
| Polarity | N-Channel |
| Package | Q-DPAK bottom-side cooled |
| RoHS | Yes |
| Halogen Free | Yes |
| Lead Free | Yes |
No datasheet is available for this part.
