IPS060N03LGAKMA1

Name: IPS060N03LGAKMA1 Infineon
Brand: Infineon
SKU: IPS060N03LGAKMA1

Power Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, GREEN, PLASTIC PACKAGE-3

PackageTO-251-3

PolarityN-CHANNEL

Power56W

Quick Jump:

Infineon IPS060N03LGAKMA1 technical specifications.

Package/Case	TO-251-3
Continuous Drain Current (ID)	50A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	6mR
Fall Time	3ns
Gate to Source Voltage (Vgs)	20V
Halogen Free	Halogen Free
Input Capacitance	2.4nF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	56W
Package Quantity	1500
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	56W
Rds On Max	6mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	20ns
Turn-On Delay Time	5ns