N-Channel Power MOSFET, TO-251 package, featuring 30V Drain-Source Breakdown Voltage and 40A Continuous Drain Current. Offers low 9mΩ Rds On resistance and 42W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C. Includes fast switching characteristics with a 3ns fall time and 4ns turn-on delay. RoHS compliant and Halogen Free.
PackageTO-251-3
PolarityN-CHANNEL
Power42W
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Technical Specifications
Infineon IPS090N03LGAKMA1 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 6.22mm |
| Input Capacitance | 1.6nF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Package Quantity | 1500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Rds On Max | 9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 4ns |
| Width | 2.39mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPS090N03LGAKMA1 Datasheet
Download the complete datasheet for Infineon IPS090N03LGAKMA1 to view detailed technical specifications.
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