This N-channel OptiMOS 6 power MOSFET is rated for 200 V drain-source voltage and 87 A continuous drain current at TC = 25°C with a maximum on-state resistance of 12.9 mΩ at VGS = 10 V. It is housed in a PG-HSOF-8 package and supports junction temperatures from -55°C to 175°C. Typical dynamic performance includes 37 nC total gate charge, 116 nC output charge, and 2900 pF input capacitance at the stated test conditions. The device uses Pb-free lead plating, is RoHS compliant, halogen-free according to IEC61249-2-21, and is classified MSL 1.
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Infineon IPT129N20NM6 technical specifications.
| Drain-Source Voltage | 200V |
| Continuous Drain Current | 87A |
| Drain-Source On-Resistance Max | 12.9mΩ |
| Drain-Source On-Resistance Typ | 10.9mΩ |
| Gate Threshold Voltage Typ | 3.7V |
| Input Capacitance Typ | 2900pF |
| Output Capacitance Typ | 460pF |
| Reverse Transfer Capacitance Typ | 19pF |
| Total Gate Charge Typ | 37nC |
| Output Charge Typ | 116nC |
| Diode Forward Voltage Typ | 0.90V |
| Reverse Recovery Charge Typ | 43nC |
| Operating Junction Temperature Max | 175°C |
| Thermal Resistance Junction-Case Typ | 0.32°C/W |
| RoHS | Compliant |
| Halogen-free | IEC61249-2-21 |
| Msl | 1 |
No datasheet is available for this part.
