This N-channel superjunction power MOSFET is rated for 600 V drain-source voltage and is housed in a TOLL surface-mount package with Kelvin source connection. It provides a maximum drain-source on-state resistance of 80 mΩ at 25 °C with a typical total gate charge of 42 nC and a typical output capacitance energy figure of 5 µJ at 400 V. The device supports 29 A continuous drain current at 25 °C and 83 A pulsed drain current, with operation from -55 °C to 150 °C junction temperature. The package is specified as MSL1 and total Pb-free, and the datasheet highlights its suitability for high-current PFC and high-performance LLC topologies.
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Infineon IPT60R080G7 technical specifications.
| Drain-Source Breakdown Voltage | 600V |
| Drain-Source On-State Resistance Max | 80mΩ |
| Drain-Source On-State Resistance Typ | 69mΩ |
| Continuous Drain Current | 29A |
| Pulsed Drain Current | 83A |
| Total Gate Charge | 42nC |
| Gate-Source Charge | 8nC |
| Gate-Drain Charge | 15nC |
| Gate Threshold Voltage Typ | 3.5V |
| Input Capacitance | 1640pF |
| Output Capacitance | 34pF |
| Turn-On Delay Time | 19ns |
| Rise Time | 5ns |
| Turn-Off Delay Time | 61ns |
| Fall Time | 3.5ns |
| Reverse Recovery Time | 310ns |
| Reverse Recovery Charge | 3.7µC |
| Thermal Resistance Junction-Case | 0.75°C/W |
| Operating Junction Temperature | -55 to 150°C |
| Package | TOLL (PG-HSOF-8) |
| Lead Free | Total Pb-free |
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