This device is an N-channel power MOSFET for industrial power conversion and high-current hard-switching or resonant topologies. It is rated for 600 V drain-source voltage, 23 A continuous drain current, and 66 A pulsed drain current. The MOSFET specifies a maximum RDS(on) of 102 mΩ at 10 V, a typical total gate charge of 34 nC, and a gate-drain charge of 12 nC. It is supplied in the TOLL surface-mount package with 8 pins and an integrated Kelvin source concept. The device operates from -55 °C to 150 °C and is lead-free, halogen-free, and RoHS compliant.
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| Drain-Source Voltage | 600V |
| Continuous Drain Current | 23A |
| Pulsed Drain Current | 66A |
| Drain-Source On Resistance | 102mΩ |
| Total Gate Charge | 34nC |
| Gate-Drain Charge | 12nC |
| Power Dissipation | 141W |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 150°C |
| Thermal Resistance Junction-to-Ambient | 62K/W |
| Thermal Resistance Junction-to-Case | 0.888K/W |
| Gate Threshold Voltage | 3.5V |
| Mounting | SMT |
| Pin Count | 8Pins |
| Lead-free | Yes |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
