This 150 V N-channel power MOSFET uses OptiMOS™ 6 technology and is offered in a TOLT (PG-HDSOP-16) package for top-side cooling. It supports up to 264 A continuous drain current at 25 °C, 1056 A pulsed drain current, and a maximum drain-source on-resistance of 2.5 mΩ at 10 V gate drive. The device is specified for junction temperatures from -55 °C to 175 °C and dissipates up to 395 W with 0.38 °C/W junction-to-case thermal resistance. Typical dynamic performance includes 105 nC total gate charge, 310 nC output charge, and 25 pF reverse transfer capacitance. It is 100% avalanche tested, RoHS compliant, and halogen-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPTC025N15NM6 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Drain-Source Voltage | 150V |
| Continuous Drain Current @25°C | 264A |
| Continuous Drain Current @100°C, VGS=10V | 187A |
| Continuous Drain Current @100°C, VGS=8V | 173A |
| Pulsed Drain Current | 1056A |
| Power Dissipation | 395W |
| Drain-Source On-Resistance Max @10V | 2.5mΩ |
| Gate Threshold Voltage | 3.0 to 4.0V |
| Gate Threshold Voltage Typ | 3.5V |
| Total Gate Charge Typ | 105nC |
| Output Charge Typ | 310nC |
| Reverse Recovery Charge Typ @500A/µs | 184nC |
| Input Capacitance Typ | 7500pF |
| Output Capacitance Typ | 2300pF |
| Reverse Transfer Capacitance Typ | 25pF |
| Avalanche Energy Single Pulse | 960mJ |
| Thermal Resistance Junction-Case | 0.38°C/W |
| Operating Junction Temperature | -55 to 175°C |
| Diode Forward Voltage Typ | 0.87V |
| RoHS | Compliant |
| Halogen Free | Yes |
Download the complete datasheet for Infineon IPTC025N15NM6 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
