N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 199mΩ drain-to-source resistance at a nominal gate-source voltage of 3V. Designed for high-power applications, it boasts a maximum power dissipation of 139W and operates within a temperature range of -55°C to 150°C. The component is housed in a TO-247 plastic package with through-hole termination and is RoHS compliant.
PackageTO-247-3
PolarityN-CHANNEL
Power139W
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Technical Specifications
Infineon IPW50R199CPFKSA1 technical specifications.
General
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 199mR |
| Drain to Source Voltage (Vdss) | 550V |
| Dual Supply Voltage | 550V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.8nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Package Quantity | 240 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 139W |
| Radiation Hardening | No |
| Rds On Max | 199mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Termination | Through Hole |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPW50R199CPFKSA1 Datasheet
Download the complete datasheet for Infineon IPW50R199CPFKSA1 to view detailed technical specifications.
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