This N-channel power MOSFET is rated for 650 V and 75 A in a TO247 4-pin through-hole package. It has a maximum RDS(on) of 19 mΩ at 10 V and a typical gate charge of 215 nC. The device supports pulsed drain current up to 496 A and dissipates up to 446 W. Operating temperature ranges from -55 °C to 150 °C, with maximum thermal resistance of 0.28 K/W junction-to-case and 62 K/W junction-to-ambient. It is lead-free, halogen-free, and RoHS compliant.
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Infineon IPZ65R019C7 technical specifications.
| Drain current | 75A |
| Drain current at 25°C | 75A |
| Pulsed drain current | 496A |
| Mounting | THT |
| Operating temperature range | -55 to 150°C |
| Package | TO247 4-pin |
| Pin count | 4Pins |
| Polarity | N |
| Power dissipation max | 446W |
| Gate charge | 215nC |
| Gate charge typ at 10V | 215nC |
| RDS(on) max at 10V | 19mΩ |
| RDS(on) max at 25°C | 19mΩ |
| Thermal resistance junction-to-ambient max | 62K/W |
| Thermal resistance junction-to-case max | 0.28K/W |
| Special features | Highest performance |
| Drain-source voltage max | 650V |
| Gate threshold voltage range | 3 to 4V |
| Gate threshold voltage | 3.5V |
| RoHS Compliant | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
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