This N-channel super-junction power MOSFET is rated for 600 V blocking voltage and 91 A continuous drain current at 25°C. It uses the CoolMOS™ CM8 platform with an integrated fast body diode, ESD protection, and a 24 mΩ maximum on-resistance at VGS = 10 V and Tj = 25°C. Typical total gate charge is 122 nC, pulsed drain current reaches 359 A, and reverse recovery time is 149.8 ns typical with 187.3 ns maximum. The device is housed in a PG-TO247-4 package with asymmetric 4-pin leads and provides 0.29 K/W typical junction-to-case thermal resistance. Storage temperature spans -55°C to 150°C, and extended operating junction temperature is specified up to 175°C for limited lifetime exposure.
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| Drain-Source Voltage | 600V |
| Continuous Drain Current | 91 @ 25°CA |
| Continuous Drain Current | 57 @ 100°CA |
| Pulsed Drain Current | 359A |
| Drain-Source On-Resistance | 24 max @ VGS = 10 V, Tj = 25°CmΩ |
| Gate Charge Total | 122 typnC |
| Gate Threshold Voltage | 4.2 typ, 3.7 to 4.7V |
| Input Capacitance | 5382 typpF |
| Output Capacitance | 66 typpF |
| Effective Output Capacitance | 205 energy-relatedpF |
| Turn-On Delay Time | 23.4 typns |
| Rise Time | 7.1 typns |
| Turn-Off Delay Time | 111.4 typns |
| Fall Time | 4.9 typns |
| Reverse Recovery Time | 149.8 typ, 187.3 maxns |
| Reverse Recovery Charge | 1.11 typ, 1.66 maxµC |
| Thermal Resistance Junction-to-Case | 0.29 typK/W |
| Power Dissipation | 431W |
| Avalanche Energy, Single Pulse | 211mJ |
| ESD Class (HBM) | 2 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
