This N-channel superjunction power MOSFET is rated for 650 V drain-source voltage with 25 mΩ maximum on-state resistance and 90 A continuous drain current at 25°C. The device is offered in a PG-TO247-4-12 package with asymmetric 4-pin TO247 leads and operates from -55°C to 150°C junction temperature, with extended operation up to 175°C for limited application lifetime. It integrates a fast body diode and ESD protection, supports hard and soft switching topologies, and uses .XT interconnection technology for improved thermal performance. Typical dynamic characteristics include 124 nC total gate charge, 5910 pF input capacitance, 66 pF output capacitance, and 150 ns reverse recovery time.
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| Drain-Source Voltage | 650V |
| Continuous Drain Current | 90A |
| Continuous Drain Current at 100°C | 56A |
| Pulsed Drain Current | 359A |
| Drain-Source On-Resistance | 25mΩ |
| Gate Threshold Voltage | 4.2 typV |
| Total Gate Charge | 124 typnC |
| Input Capacitance | 5910 typpF |
| Output Capacitance | 66 typpF |
| Effective Output Capacitance, Energy-Related | 176 typpF |
| Effective Output Capacitance, Time-Related | 1932 typpF |
| Power Dissipation | 431W |
| Thermal Resistance Junction-to-Case | 0.29K/W |
| Operating Junction Temperature | -55 to 150°C |
| Extended Junction Temperature | 175 max°C |
| Gate-Source Voltage Static | -20 to 20V |
| Avalanche Energy, Single Pulse | 211mJ |
| Reverse Recovery Time | 150 typns |
| Reverse Recovery Charge | 1.1 typµC |
| Peak Reverse Recovery Current | 15.3 typA |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
