This device is a 60 V N-channel logic-level power MOSFET in Infineon's OptiMOS 5 family. It is specified with a maximum drain-source on-resistance of 0.86 mΩ at VGS = 10 V and 1.24 mΩ at VGS = 4.5 V, with continuous drain current up to 447 A at TC = 25 °C. The part is housed in a PG-TSON-8 package and operates across a junction and storage temperature range of -55 °C to 175 °C. It is 100% avalanche tested, uses Pb-free lead plating, is RoHS compliant, and is halogen-free according to IEC 61249-2-21.
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Infineon IQDH88N06LM5 technical specifications.
| Transistor Type | N-channel logic-level MOSFET |
| Drain-Source Voltage | 60V |
| On-Resistance Max @ VGS=10V, ID=50A | 0.86mΩ |
| On-Resistance Max @ VGS=4.5V, ID=50A | 1.24mΩ |
| Continuous Drain Current @ TC=25°C | 447A |
| Continuous Drain Current @ TC=100°C, VGS=10V | 316A |
| Continuous Drain Current @ TC=100°C, VGS=4.5V | 263A |
| Continuous Drain Current @ TA=25°C | 42A |
| Pulsed Drain Current | 1788A |
| Avalanche Energy Single Pulse | 1115mJ |
| Gate-Source Voltage | -20 to 20V |
| Power Dissipation @ TC=25°C | 333W |
| Power Dissipation @ TA=25°C | 3.0W |
| Operating Junction Temperature | -55 to 175°C |
| Thermal Resistance Junction-Case | 0.45°C/W |
| Thermal Resistance Junction-Ambient | 50°C/W |
| Gate Threshold Voltage | 1.1 to 2.3V |
| Input Capacitance | 11000 typ, 14000 maxpF |
| Output Capacitance | 2000 typ, 2600 maxpF |
| Reverse Transfer Capacitance | 95 typ, 170 maxpF |
| Turn-On Delay Time | 14 typns |
| Rise Time | 8 typns |
| Turn-Off Delay Time | 53 typns |
| Fall Time | 16 typns |
| Total Gate Charge @ 4.5V | 76 typ, 95 maxnC |
| Total Gate Charge @ 10V | 152 typ, 202 maxnC |
| Output Charge | 133 typ, 177 maxnC |
| Reverse Diode Forward Current | 271A |
| Reverse Diode Forward Voltage | 0.77 typ, 1.0 maxV |
| Reverse Recovery Time | 44 typ, 88 max at IF=25Ans |
| Reverse Recovery Charge | 49 typ, 98 max at IF=25AnC |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Finish | Pb-free lead plating |
No datasheet is available for this part.