This 30 V N-channel logic-level power MOSFET uses OptiMOS 5 technology in a PQFN 3.3 x 3.3 mm Source-Down package with dual-side cooling. It is specified for up to 252 A continuous drain current at 25 °C case temperature, 1008 A pulsed drain current, and 0.85 mΩ maximum drain-source on-resistance at 10 V gate drive. The device supports 4.5 V and 10 V gate drive, with total gate charge of 30 nC at 4.5 V and 64 nC at 10 V, and operates from -55 °C to 150 °C. It is intended for high-performance SMPS synchronous rectification and is listed as RoHS compliant and halogen-free.
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| Drain-Source Voltage | 30V |
| Continuous Drain Current (@25°C case) | 252A |
| Continuous Drain Current (@100°C case, 10V gate) | 159A |
| Continuous Drain Current (@100°C case, 4.5V gate) | 147A |
| Pulsed Drain Current | 1008A |
| Gate-Source Voltage | -16 to 16V |
| Operating Junction Temperature | -55 to 150°C |
| RDS(on) Max (@10V) | 0.85mΩ |
| RDS(on) Max (@4.5V) | 1mΩ |
| Gate Threshold Voltage | 1.2 to 2.0V |
| Input Capacitance | 4400 typpF |
| Output Capacitance | 1100 typpF |
| Reverse Transfer Capacitance | 110 typpF |
| Total Gate Charge (@4.5V) | 30 typnC |
| Total Gate Charge (@10V) | 64 typnC |
| Output Charge | 31 typnC |
| Thermal Resistance Junction-to-Case Bottom | 1.4 max°C/W |
| Thermal Resistance Junction-to-Case Top | 0.7 typ°C/W |
| Package | PG-WHTFN-9 / PQFN 3.3x3.3 Source-Down |
| Halogen Free | Yes |
| RoHS Compliant | Yes |
| RoHS | Compliant |
| Halogen Free | Yes |
