The IQE031N08LM6CGSCATMA1 is an OptiMOS 6 power MOSFET optimized for synchronous rectification in computing and telecom applications. It features a Source-Down (SD) package configuration which improves thermal performance by providing a larger thermal pad on the PCB side. This N-channel logic level device offers very low on-resistance (RDS(on)) and is 100% avalanche tested.
Temp Range-55 to 175°C
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Technical Specifications
Infineon IQE031N08LM6CGSCATMA1 technical specifications.
General
| Drain-Source Voltage | 80V |
| Continuous Drain Current (Tc=25°C) | 126A |
| Static Drain-Source On-State Resistance (Max) | 3.1mΩ |
| Gate Charge (Qg) | 31nC |
| Gate Threshold Voltage (Vgs(th)) | 1.1 to 2.3V |
| Power Dissipation (Tc=25°C) | 89W |
| Operating Temperature | -55 to 175°C |
Compliance
| RoHS | Compliant |
| Halogen-free | Yes |
Datasheet
Infineon IQE031N08LM6CGSCATMA1 Datasheet
Download the complete datasheet for Infineon IQE031N08LM6CGSCATMA1 to view detailed technical specifications.
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