This N-channel power MOSFET uses OptiMOS 5 technology and a PQFN 3.3 x 3.3 Source-Down package that couples the source potential to the PCB thermal pad. It is rated for 80 V drain-source voltage, 101 A drain current at 25°C, and 5.0 mOhm maximum RDS(on) at 10 V gate drive. Typical total gate charge is 34.6 nC, and the gate threshold voltage is specified from 2.2 V to 3.8 V with a 3.0 V typical value. The device operates from -55°C to 175°C and is supplied in tape-and-reel packaging with 5000 pieces per standard pack. The listed orderable version is RoHS compliant and halogen free.
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| Drain-source voltage | 80V |
| Continuous drain current | 101A |
| On-resistance RDS(on) max @ VGS=10V | 5mOhm |
| Total gate charge Qg typ @ VGS=10V | 34.6nC |
| Gate threshold voltage min | 2.2V |
| Gate threshold voltage typ | 3.0V |
| Gate threshold voltage max | 3.8V |
| Operating temperature min | -55°C |
| Operating temperature max | 175°C |
| Package | PQFN 3.3x3.3 Source-Down |
| Package family | PG-TSON-8-4 |
| Lead count | 8 |
| Lead pitch | 0.65mm |
| Body length | 3.3mm |
| Body width | 3.3mm |
| Body thickness | 1.0mm |
| Moisture sensitivity level | 1 |
| Packing type | TAPE & REEL |
| Polarity | N |
| RoHS | Compliant |
| Halogen Free | Yes |
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