This 25 V OptiMOS™ 7 N-channel MOSFET is optimized for soft-switching topologies and supports logic-level drive. It provides up to 422 A continuous drain current at 25°C, 1688 A pulsed drain current, and maximum drain-source on-resistance of 0.5 mΩ at 10 V or 0.64 mΩ at 4.5 V. The device is offered in a PQFN 3.3x3.3 Source-Down package and operates from -55°C to 175°C. Typical total gate charge is 63 nC at 10 V and 29 nC at 4.5 V, and threshold voltage is 1.4 V with a 1.1 V to 1.7 V range. The recommended orderable part is RoHS compliant, halogen free, and supplied in tape-and-reel packaging.
Infineon IQEH50NE2LM7ZCG technical specifications.
| Drain current (continuous, max @25°C) | 422A |
| Drain current (pulsed, max) | 1688A |
| Operating temperature range | -55 to 175°C |
| Package | PQFN 3.3x3.3 Source-Down |
| Polarity | N |
| Total gate charge (typ @10 V) | 63nC |
| Total gate charge (typ @4.5 V) | 29nC |
| Drain-source on-resistance (max @10 V) | 0.5mΩ |
| Drain-source on-resistance (max @4.5 V) | 0.64mΩ |
| Special features | Logic Level; Soft-switching optimized |
| Drain-source voltage (max) | 25V |
| Gate threshold voltage range | 1.1 to 1.7V |
| Gate threshold voltage (typ) | 1.4V |
| RoHS Compliant | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
