This 25 V N-channel power MOSFET is optimized for hard- and soft-switching topologies in AI and data center power applications. It supports up to 406 A drain current at 25°C, with RDS(on) of 0.54 mΩ at 10 V and 0.84 mΩ at 4.5 V, and typical total gate charge of 27 nC at 4.5 V or 57 nC at 10 V. The device is offered in a PQFN 3.3 x 3.3 Source-Down package with 0.65 mm lead pitch and operates from -55°C to 175°C. It is logic-level capable, halogen free, and RoHS compliant.
Infineon IQEH54NE2LM7UCG technical specifications.
| Channel Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 25V |
| Continuous Drain Current (ID) | 406A |
| Operating Temperature Min | -55°C |
| Operating Temperature Max | 175°C |
| Gate Charge (Qg) @ 4.5 V | 27nC |
| Gate Charge (Qg) @ 10 V | 57nC |
| On-Resistance (RDS(on)) @ 10 V | 0.54mΩ |
| On-Resistance (RDS(on)) @ 4.5 V | 0.84mΩ |
| Gate Threshold Voltage Min | 1.4V |
| Gate Threshold Voltage Typ | 1.7V |
| Gate Threshold Voltage Max | 2V |
| Package | PQFN 3.3x3.3 Source-Down |
| Lead Pitch | 0.65mm |
| Body Length | 3.3mm |
| Body Width | 3.3mm |
| Body Thickness | 1.0mm |
| Moisture Sensitivity Level | 1 |
| Special Feature | Logic Level |
| Switching Optimization | Hard-switching optimized |
| RoHS | Compliant |
| Halogen Free | Yes |
No datasheet is available for this part.
