This N-channel logic-level power MOSFET is optimized for both hard-switching and soft-switching topologies at 25 V. It offers a maximum drain-source on-resistance of 0.84 mΩ at 10 V gate drive and 1.3 mΩ at 4.5 V, with continuous drain current up to 275 A. The device is housed in a PG-TTFN-9 source-down package and is rated for operation from -55 °C to 175 °C. Typical dynamic performance includes 37 nC total gate charge at 10 V, 24 nC output charge, and 30 ns reverse recovery time at 100 A/µs. It is RoHS compliant and halogen free.
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| Drain-source voltage | 25V |
| Continuous drain current | 275A |
| Pulsed drain current | 1100A |
| Drain-source on-state resistance max @ VGS=10 V | 0.84mΩ |
| Drain-source on-state resistance max @ VGS=4.5 V | 1.3mΩ |
| Gate threshold voltage | 1.4 to 2.0V |
| Operating temperature | -55 to 175°C |
| Thermal resistance junction-to-case | 1.4°C/W |
| Input capacitance | 3000 typpF |
| Output capacitance | 1100 typpF |
| Reverse transfer capacitance | 52 typpF |
| Total gate charge @ VGS=10 V | 37 typnC |
| Output charge | 24 typnC |
| Turn-on delay time | 5.1 typns |
| Rise time | 3.0 typns |
| Turn-off delay time | 18 typns |
| Fall time | 2.4 typns |
| Avalanche energy single pulse | 140mJ |
| Reverse recovery time @ dIF/dt=100 A/µs | 30 typns |
| Package | PG-TTFN-9 |
| RoHS | Compliant |
| Halogen Free | Yes |
