This device is a high- and low-side gate driver for MOSFET and IGBT power stages with independent output channels. It supports a floating high-side channel up to 200 V and uses a 10 V to 20 V gate-drive supply range with a separate 3.3 V to 20 V logic supply. The outputs provide typical 3.0 A source and sink drive capability, matched propagation delays, undervoltage lockout on both channels, and a shutdown input that turns off both outputs. It is offered in a 16-lead wide-body SOIC package and the datasheet lists industrial qualification, MSL3, and RoHS compliance.
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Infineon IR2010SPBF, IR2010STRPBF technical specifications.
| High-side floating offset voltage | 200V |
| Output source current | 3.0A |
| Output sink current | 3.0A |
| Gate drive supply voltage | 10 to 20V |
| Logic supply voltage | 3.3 to 20V |
| Turn-on propagation delay | 95 typns |
| Turn-off propagation delay | 65 typns |
| Shutdown propagation delay | 70 typns |
| Turn-on rise time | 10 typns |
| Turn-off fall time | 15 typns |
| Delay matching | 15 maxns |
| Ambient operating temperature | -40 to 125°C |
| Package | 16-Lead SOIC Wide Body |
| Moisture sensitivity level | MSL3 |
| Qualification level | Industrial |
| RoHS | Yes |
Download the complete datasheet for Infineon IR2010SPBF, IR2010STRPBF to view detailed technical specifications.
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