This half-bridge gate driver IC is designed for driving IGBTs and MOSFETs in high-side and low-side configurations. It operates up to 600 V and uses functional level-shift isolation with a 10 V to 20 V gate-drive supply range. The device provides 0.21 A source current and 0.36 A sink current, includes undervoltage lockout, and integrates shutdown and cross-conduction prevention logic. The listed orderable variants use the SOIC 8N package and are qualified for industrial applications.
Infineon IR2104SPBF, IR2104STRPBF technical specifications.
| Channels | 2 |
| Configuration | Half-Bridge |
| Input VCC range | 10 to 20V |
| Isolation Type | Functional levelshift JI (Junction Isolated) |
| Output Current (Sink) | 0.36A |
| Output Current (Source) | 0.21A |
| Qualification | Industrial |
| Turn Off Propagation Delay | 150ns |
| Turn On Propagation Delay | 680ns |
| VCC UVLO (Off) | 8.2V |
| VCC UVLO (On) | 8.9V |
| Voltage Class | 600V |
| RoHS Compliant | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
