This half-bridge gate driver IC operates up to 600 V and provides typical 0.2 A source and 0.35 A sink output currents. It uses a 10 V to 20 V gate-drive supply, supports two channels, and implements functional level-shift junction isolation. The device includes undervoltage lockout on both channels, matched propagation delays, cross-conduction prevention logic, and 540 ns internal dead time. It is offered in an 8-lead SOIC package for driving IGBTs and MOSFETs in home appliance and power conversion applications.
Infineon IR2109SPBF, IR2109STRPBF technical specifications.
| Channels | 2 |
| Configuration | Half-Bridge |
| Input Vcc Range | 10 to 20V |
| Isolation Type | Functional levelshift JI (Junction Isolated) |
| Output Current (Sink) | 0.35A |
| Output Current (Source) | 0.2A |
| Qualification | Industrial |
| Turn Off Propagation Delay | 200ns |
| Turn On Propagation Delay | 750ns |
| VBS UVLO On | 8.9V |
| VBS UVLO Off | 8.2V |
| VCC UVLO On | 8.9V |
| VCC UVLO Off | 8.2V |
| Voltage Class | 600V |
| Logic Input Compatibility | 3.3, 5, 15V |
| Ground Offset Tolerance | ±5V |
| Internal Dead Time | 540ns |
| Shutdown | Yes |
| Cross-Conduction Prevention | Yes |
| dV/dt Immune | Yes |
| RoHS | Yes |
| Lead Free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
