This single-channel high-side gate driver is designed for IGBTs and MOSFETs in bootstrap-operated power stages. It supports a 600 V voltage class, a 10 V to 20 V input VCC range, and typical source and sink drive currents of 0.25 A and 0.5 A. The device includes overcurrent protection and fault reporting, with typical turn-on and turn-off propagation delays of 200 ns and 150 ns. It is offered in an SOIC 8N package and specifies VBS undervoltage lockout thresholds of 7.2 V on and 6.8 V off.
Infineon IR21271SPBF, IR21271STRPBF technical specifications.
| Channels | 1 |
| Configuration | High-side |
| Input VCC range | 10 to 20V |
| Isolation type | Functional levelshift JI (Junction Isolated) |
| Output current (source) | 0.25A |
| Output current (sink) | 0.5A |
| Qualification | Industrial |
| Turn-off propagation delay | 150ns |
| Turn-on propagation delay | 200ns |
| VBS UVLO off | 6.8V |
| VBS UVLO on | 7.2V |
| Voltage class | 600V |
| RoHS | Yes |
| Lead-free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.
