
This half-bridge gate driver IC operates up to 600 V and provides typical 1.9 A source and 2.3 A sink drive capability for MOSFET and IGBT stages. It uses a functional level-shift junction-isolated architecture with programmable deadtime, two channels, and a 10 V to 20 V gate-drive supply range. Industrial qualification, turn-on and turn-off propagation delays of 180 ns and 220 ns, and VBS and VCC undervoltage lockout thresholds of 8.9 V on and 8.2 V off are specified on the product page. The verified orderable variant is supplied in a 14-pin SOIC package and is lead-free, halogen-free, and RoHS compliant.
Infineon IR21834SPBF, IR21834STRPBF technical specifications.
| Channels | 2 |
| Configuration | Half-Bridge |
| Input VCC range | 10 to 20V |
| Isolation type | Functional levelshift JI (Junction Isolated) |
| Output current (sink) | 2.3A |
| Output current (source) | 1.9A |
| Qualification | Industrial |
| Turn-off propagation delay | 220ns |
| Turn-on propagation delay | 180ns |
| VBS UVLO off | 8.2V |
| VBS UVLO on | 8.9V |
| VCC UVLO off | 8.2V |
| VCC UVLO on | 8.9V |
| Voltage class | 600V |
| Input logic compatibility | 3.3 and 5V |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
No datasheet is available for this part.