This half-bridge high-voltage gate driver provides dependent high-side and low-side outputs for driving N-channel MOSFETs or IGBTs. The floating channel supports bootstrap operation up to 600 V, and the gate-drive supply operates from 10 V to 20 V. Inputs are compatible with 3.3 V and 5 V logic, and both channels include undervoltage lockout. The device offers matched propagation delays, programmable dead time from about 0.4 µs to 5 µs, and 1.4 A/1.8 A source and sink current capability. It is offered in a 14-lead SOIC package and supports ambient operation from -40 °C to 125 °C.
Infineon IR21844SPBF, IR21844STRPBF technical specifications.
| Driver Configuration | Half-Bridge |
| Channel Count | 2 |
| High-Side Voltage | 600V |
| Gate Drive Supply Range | 10 to 20V |
| Input Logic Compatibility | 3.3 and 5V |
| Output Source Current | 1.4A |
| Output Sink Current | 1.8A |
| Turn-On Propagation Delay | 680 typns |
| Turn-Off Propagation Delay | 270 typns |
| Shutdown Propagation Delay | 180 typns |
| Programmable Dead Time | 0.4 to 5us |
| Undervoltage Lockout Positive Threshold | 8.9 typV |
| Undervoltage Lockout Negative Threshold | 8.2 typV |
| Ambient Operating Temperature | -40 to 125°C |
| Package | 14-lead SOIC |
| RoHS | Compliant |
No datasheet is available for this part.
