This device is a high-voltage, high-speed gate driver with independent high-side and low-side referenced output channels for driving MOSFETs and IGBTs. Its floating channel is designed for bootstrap operation and is fully operational up to 1200 V. The gate-drive supply range is 12 V to 20 V, and the logic interface supports 3.3 V control with a separate logic supply range from 3.3 V to 20 V. It includes undervoltage lockout on both channels, CMOS Schmitt-triggered inputs with pull-down, and cycle-by-cycle edge-triggered shutdown logic. The outputs are in phase with the inputs and the two channels are specified with matched propagation delay.
Infineon IR2213SPBF, IR2213STRPBF technical specifications.
| Driver type | High and low side MOSFET/IGBT driver |
| High-side floating channel voltage | 1200V |
| Bootstrap operation | Yes |
| Gate drive supply minimum | 12V |
| Gate drive supply maximum | 20V |
| Logic compatible minimum | 3.3V |
| Logic supply minimum | 3.3V |
| Logic supply maximum | 20V |
| Logic and power ground offset | ±5V |
| Undervoltage lockout | Both channels |
| Input type | CMOS Schmitt-triggered with pull-down |
| Shutdown mode | Cycle-by-cycle edge-triggered |
| Propagation delay matching | Matched for both channels |
| Output phase relationship | Outputs in phase with inputs |
| Pbf | Lead-Free |
No datasheet is available for this part.
