This three-phase gate driver IC is designed to drive IGBTs and MOSFETs in high-voltage bridge applications. It supports floating-channel bootstrap operation up to 1200 V and provides typical source and sink drive currents of 0.25 A and 0.5 A. The device includes undervoltage lockout on all channels, over-current shutdown protection, tolerance to negative transient voltage, and dV/dt immunity. It operates from a 10 V to 20 V gate-drive supply with transient capability up to 25 V and accepts 2.5 V logic-level control signals. These orderable variants use the PG-LCC-32-900, also described as a 44-lead PLCC, and are RoHS compliant and lead-free.
Infineon IR2233JPBF, IR2233JTRPBF technical specifications.
| Maximum floating channel voltage | 1200V |
| Number of phases | 3 |
| Half-bridge drivers | 3 |
| Source current | 0.25A |
| Sink current | 0.5A |
| Gate drive supply minimum | 10V |
| Gate drive supply maximum | 20V |
| Gate drive transient maximum | 25V |
| Logic input compatibility | 2.5V |
| Undervoltage lockout | Yes |
| Over-current shutdown | Yes |
| dV/dt immunity | Yes |
| Bootstrap operation | Supported |
| Negative transient voltage tolerance | Yes |
| RoHS | Compliant |
| Lead Free | Yes |
No datasheet is available for this part.
