This device is a three-phase high-voltage MOSFET and IGBT gate driver with three independent high-side and three low-side output channels for bridge applications. The floating channels support bootstrap operation and are specified for offset operation up to 1200 V on the IR2233 family. It operates from 10 V or 12 V to 20 V gate-drive supplies, supports logic inputs down to 2.5 V, and includes undervoltage lockout on all channels. An integrated operational amplifier, over-current trip input, shutdown input, and open-drain FAULT indication support bridge current monitoring and coordinated protection. The SPBF and STRPBF orderable variants correspond to the 28-lead SOIC package family.
Infineon IR2233SPBF, IR2233STRPBF technical specifications.
| Driver configuration | 3 half-bridge drivers, 6 outputs |
| High-side offset voltage | 1200 maxV |
| Output source current | 200mA |
| Output sink current | 420mA |
| Gate drive supply voltage | 10/12 to 20V |
| Gate drive supply transient | 25 maxV |
| Logic input compatibility | 2.5V |
| Turn-on propagation delay | 750 typns |
| Turn-off propagation delay | 700 typns |
| Deadtime | 250 typns |
| ITRIP positive threshold | 570 typmV |
| ITRIP negative threshold | 460 typmV |
| Input filter time | 310 typns |
| Junction temperature | 125 max°C |
| Storage temperature | -55 to 150°C |
| RoHS | Compliant |
No datasheet is available for this part.
