This N-channel power MOSFET is rated for 40 V drain-to-source voltage and up to 150 A continuous drain current. It uses Infineon's DirectFET (M) package with a low 0.7 mm profile and supports dual-sided cooling for improved thermal performance. The device is optimized for low on-resistance and low gate charge, with 3.4 mΩ maximum RDS(on) at 10 V gate drive and 42 nC typical total gate charge. It is intended for high-efficiency power conversion applications such as synchronous buck converters, DC-DC converters, battery management systems, inverters, and DC motor drives. The orderable part is supplied in tape-and-reel packaging and is lead-free, RoHS compliant, and halogen-free.
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Infineon IRF6613TRPBF technical specifications.
| Drain-to-Source Voltage | 40V |
| Continuous Drain Current | 150A |
| Drain-to-Source On-Resistance @ VGS=10V | 3.4mOhm |
| Drain-to-Source On-Resistance @ VGS=4.5V | 4.1mOhm |
| Total Gate Charge | 42nC |
| Gate-to-Drain Charge | 12.6nC |
| Gate Threshold Voltage | 1.35 to 2.25V |
| Gate-to-Source Voltage | ±20V |
| Operating Junction Temperature | -40 to 150°C |
| Thermal Resistance Junction-to-Case | 1.4°C/W |
| Power Dissipation @ TC=25°C | 89W |
| Input Capacitance | 5950pF |
| Output Capacitance | 990pF |
| Reverse Transfer Capacitance | 460pF |
| Package Height | 0.7mm |
| Moisture Sensitivity Level | 1 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
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