This device is a 60 V N-channel power MOSFET in Infineon's DirectFET large-can package. It is specified with 1.1 mΩ typical and 1.5 mΩ maximum drain-source on-resistance at 10 V gate drive and supports up to 375 A package-limited continuous drain current at 25°C case temperature. The MOSFET is optimized for synchronous rectification and high-performance isolated converter primary switching, with low conduction losses, high Cdv/dt immunity, and a low-profile package under 0.7 mm. It operates over a junction temperature range of -55°C to +175°C and is offered in tape-and-reel packaging. The part is RoHS compliant, halogen free, and lead-free with qualification up to 260°C reflow.
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Infineon IRF7749L1TRPBF technical specifications.
| Transistor Type | N-Channel Power MOSFET |
| Drain-Source Voltage | 60V |
| Static Drain-Source On-Resistance (Typ) | 1.1mΩ |
| Static Drain-Source On-Resistance (Max) | 1.5mΩ |
| Continuous Drain Current (Silicon Limited, TC=25°C) | 345A |
| Continuous Drain Current (Package Limited, TC=25°C) | 375A |
| Continuous Drain Current (TA=25°C) | 36A |
| Pulsed Drain Current | 1380A |
| Maximum Power Dissipation (TC=25°C) | 341W |
| Gate-Source Voltage | ±20V |
| Operating Junction Temperature | -55 to +175°C |
| Junction-to-Case Thermal Resistance | 0.44°C/W |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Total Gate Charge | 183 typ, 275 maxnC |
| Input Capacitance | 10655 typpF |
| Output Capacitance | 1627 typpF |
| Reverse Transfer Capacitance | 680 typpF |
| Reverse Recovery Time | 42 typns |
| Reverse Recovery Charge | 54 typnC |
| Diode Forward Voltage | 1.3 maxV |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead-free | Qualified up to 260°C reflow |
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